ERRAI, M.; AMRANE, S.; LIANG, C.-T. Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws. Journal of Atomic, Molecular, Condensed Matter and Nano Physics, [S. l.], v. 7, n. 3, p. 207–215, 2020. DOI: 10.26713/jamcnp.v7i3.1546. Disponível em: http://rgnpublications.com/journals/index.php/jamcnp/article/view/1546. Acesso em: 22 nov. 2024.