Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition

Authors

  • Shweta Tripathi Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004
  • S. Jit Centre for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005

DOI:

https://doi.org/10.26713/jamcnp.v1i1.229

Keywords:

Depletion region, GaAs MESFET, Illumination, Non-uniform doping

Abstract

This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.

Downloads

Download data is not yet available.

References

J. Rodriguez-Tellez, K. A. Mezheg, N. T. AIi, T. Fernandei, A. Mediavilla, A. Tazon and C. Navarro, Optically controlled 2.4GHz MMIC Amplifier, in Proc. of 10th International Conference on Electronics, Circuits & Systems (ICECS), 970–973 (2003).

J. M. Zamanillo, J. Portilla, C. Navarro and C. Pérez-Vega, Optoelectronic control of a MMIC VCO at Ku band, in Proc. of 5th WSEAS International Conference on Electronics, Hardware, Wireless and Optical Communications, 138–141 (2007).

S.P. Chin and C. Y. Wu, A new two dimensional model for the potential distribution of short gate length MESFETs and its application, IEEE Trans. Electron Device 39, 1928–1937 (1992).

S. P. Chin and C. Y. Wu, A New I-V Model for Short Gate-Length MESFETs, IEEE Trans. Electron Devices 40, 712–720 (1993).

P. Chakrabarti, M. Madheswaran, A. Gupta and N. A. Khan, Numerical simulation of an ionimplanted GaAs OPFET, IEEE Trans. Electron Device 46, 1360–1366 (1998).

A. Dasgupta and S. K. Lahiri, A novel analytical threshold voltage model of MOSFETs with implanted channels, Int. J. Electronics 61, 655–669 (1986).

S. A. Bashar, Study of Indium Tin Oxide (ITO) for Novel Optoelectronic Devices, Ph.D. Thesis, King's College of London, University of London (1998).

A. Dasgupta and S. K. Lahiri, A two-dimensional analytical model of threshold voltages of shortchannel MOSFETs with Gaussian-doped channels, IEEE Trans. Electron Devices 35, 390–392 (1988).

S. Bose, M. Gupta and R.S. Gupta, Id-Vd characteristics of optically biased short channel GaAs MESFET, Microelectron J. 32, 241-247 (2001).

S. M. Sze, Physics of semiconductor devices, 2nd editoin, Wiley, New York (1981).

S. Kabra, H. Kaur, S. Haldar, M. Gupta and R. S. Gupta, Two-dimensional subthreshold analysis of sub-micron GaN MESFET, Microelectron. J. 38, 547–555 (2007).

S. Jit, G. Bandhawakar and B. B. Pal, Analytical Modeling of a DCFL Inverter Using Normally-off GaAs MESFETs Under Dark and Illuminated Conditions, Solid-State Electron. 49, 628–633 (2005).

S. Tripathi and S. Jit, A two-dimensional analytical model for the gate-source and gate-drain capacitances of ion-implanted short-channel GaAs metal semiconductor field effect transistor under dark and illuminated conditions, J. Appl. Phys. 109, 053102 (2011).

Downloads

CITATION

How to Cite

Tripathi, S., & Jit, S. (2014). Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition. Journal of Atomic, Molecular, Condensed Matter and Nano Physics, 1(1), 37–43. https://doi.org/10.26713/jamcnp.v1i1.229

Issue

Vol. 1 No. 1 (2014)

Section

Research Article

License

Authors who publish with this journal agree to the following terms:
  • Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a CCAL that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
  • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work.